Self-boosted charge injection for 90-nm-node 4-Gb multilevel AG-AND flash memories programmable at 16 MB/s

This paper presents a high-speed multilevel programming scheme for 90-nm node AG-AND flash memories. Source-side hot-electron injection programming with self-boosted charge, accumulated in inversion-layer local bit-lines under AGs, reduces the dispersal of programming characteristics and also reduces the time overhead of pre-charging the bit-lines. With this self-boosted charge injection scheme, programming at a fast 16 MB/s is obtainable in 4-Gb flash memory with an actual cell size of 2F/sup 2//bit.