New explanation of ND-1 dependence of specific contact resistance for n-GaAs

A new model of the ohmic contact to n-GaAs is proposed. It assumes that the contact resistance is due to the n+/n-barrier between the contact region (n+) and the semiconductor bulk (n = ND) as long as the bulk concentration is smaller than the effective density of states. Then the contact resistance is inversely proportional to the dopant concentration.