Solution-processed indium-zinc-oxide thin-film transistors from a fast and stable pre-annealing process with a femtosecond laser

A pre-annealing manufacturing process is applied to enhance the electrical characteristics of solution-processed indium-zinc-oxide (IZO) thin-film transistors (TFTs). We show here a fast and stable pre-annealing process using a femtosecond laser to maintain electrical stability and improve electrical performance. Furthermore, the femtosecond-laser pre-annealing process is a fast preparation method that has greater flexibility and development space for semiconductor production activity. Pre-annealed IZO TFTs show a field-effect mobility of 3.75 cm2/Vs, an on-current/off-current (I on /I off ) ratio greater than 105, a threshold voltage of 1.13 V, and a subthreshold swing of 1.21 V/dec. Moreover, the femtosecond laser pre-annealing, which provides better electrical stability in the solution-processed IZO TFTs, is discussed.