Room temperature photoluminescence characterization of Si surface passivation and dielectric/Si interface quality

Significant variations in electrically active defects, traps, and contaminants, at or near the dielectric/Si interface, were found from multiwavelength RTPL spectroscopic studies of ultra-thin SiO2 films on Si prepared by various oxidation techniques and of Si with native oxide. Non-contact, multiwavelength RTPL spectroscopy was able to reveal process induced, electrically active defects and characteristics which cannot be properly investigated using conventional dielectric/Si interface characterization techniques because of their surprising invasive tendencies.