All-silicon near-infrared phototransistor based on surface-state absorption
2015
We demonstrate an all-silicon N-P-N phototransistor integrated on a silicon waveguide. The device has a high responsivity of 10 mA/W under 5 V bias at the 1550 nm telecommunication band, larger than the all-silicon P-I-N and P-N photodetectors.
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