PREDICTED AND REALIZED IMPROVED PERFORMANCES OF PZT FILM–SILICON BASED STRUCTURES FOR INTEGRATED PYROSENSORICS

ABSTRACT The comparative investigation of pyroelectric response of “polar film–Si substrate” structures based on RF-sputtered PZT and spin coated P(VDF/TrFE) films and “PZT film–porous Si layer–Si substrate” structures has been performed. By the thermowave pyroelectric under-surface probing amplitude-to-frequency and phase-to-frequency dependences of pyroelectric response of investigated systems in the voltage and current modes were obtained. Theoretical and experimental data are in a good agreement and prove that por-Si layer is suitable for effective thermal decoupling of film sensitive element and heat removing Si-substrate which realized in improved performances of pyroelectric detectors of radiation.