Determination of optical cross sections for electron and hole emission from deep defects in low‐temperature‐grown GaAs

We report on optical cross sections of electrons and holes in thin layers of LT‐GaAs embedded in hetero‐pin‐diodes. With an appropriate design, the time dependent change of the n‐layer conductance directly reflects the change in the charge state of the deep levels. The original completely filled (or empty) defect states can be created by an electrical bias or illumination by laser light. For samples annealed at 700 °C we find a defect signature very similar to the EL2 defect in the literature.