Analysis and Compact Modeling of Gate Capacitance in Organic Thin-Film Transistors

In this paper, we target the compact capacitance modeling of organic thin-film transistor (OTFTs) valid from depletion to accumulation regime taking into account the frequency dependence. The parameters used in the model are calculated through the unified model and parameter extraction method (UMEM). We include the effect related to the density of localizated states in the gate capacitance. Finally, we analyze the experimental derivative of the gate capacitance, and we demonstrate that our model predicts it with a high degree of accuracy.