Perpendicular magnetic anisotropy in Ga$\delta$FeN/Al$_x$Ga$_{1-x}$N heterostructures.

Phase-separated magnetic semiconductors containing magnetic nanostructures are relevant systems for the realization of high density magnetic recording media. Here, the controlled strain engineering of Fe-rich nanocrystals (NCs) embedded in Ga$\delta$FeN thin layers by adjusting the Al concentration $0

Keywords:

• Condensed matter physics
• Heterojunction
• Magnetic anisotropy
• Thin layers
• Perpendicular recording
• Nanocrystal
• Nitride
• Magnetic semiconductor
• Strain engineering
• Physics

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