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NONUNIVERSALITY IN MOUND FORMATION DURING SEMICONDUCTOR GROWTH
NONUNIVERSALITY IN MOUND FORMATION DURING SEMICONDUCTOR GROWTH
1999
G. Lengel
R. J. Phaneuf
Ellen D. Williams
S. Das Sarma
W. Beard
F.G. Johnson
Keywords:
Physics
Molecular beam epitaxy
Condensed matter physics
Dynamic scaling
Nuclear magnetic resonance
Semiconductor
Scanning tunneling microscope
Vacuum deposition
Correction
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