Effect of Implanted Dose on Properties of Al-N Co-doped p-type ZnO Films Prepared by Plasma Immersion Ion Implantation

ZnO∶Al films were prepared by using a radio-frequency(RF) magnetron co-sputtering system,and then ZnO∶Al∶N films were synthesized by using the plasma immersion ion implantation(PIII) method with NO and O_2 as source gases (O_2/(O_2+NO)=75%) and annealed in N_2 at 850℃.The structure,electrical and optical properties of the ZnO∶Al∶N films were studied with the help of X-ray Diffractometer(XRD),Hall effect test system,Photoluminescence(PL) spectrometer and UV-visible spectrometer.The results indicate that when the implantation dose was about 10~(15)cm~(-2) the N atoms exist in the films as acceptors and form N-Al and N-Zn bonds by occupying the O vacancies(V_O) and substituting O atoms and implantation dose of 10~(15)cm~(-2) order is a pivotal parameter to achieve p-type ZnO∶Al∶N films.The carrier concentration,Hall mobility and resistivity of the p-type ZnO∶Al∶N films are 2.16×10~(16) cm~(-3),32.4 cm~2/V·s and 8.90 Ω·cm,respectively.The effect of the N~+ implantation dose on the structure,electrical and optical properties of ZnO∶Al∶N films were studied.