Growth and evaluation of GaAsN films with different N distribution grown by atomic layer epitaxy method

GaAsN films with different N distributions have been grown using the atomic layer epitaxy method to evaluate the effects of N distribution on the electrical properties of GaAsN. Three films, which had the same N composition with different N distribution were fabricated by alternate stack of GaAsN 1 monolayer (ML) and GaAs (0, 3, 5) ML. According to the X-ray diffraction measurement, periodicity and small N interdiffusion between GaAs and GaAsN layers in grown GaAsN films were confirmed. Thus, N distribution in the films were successfully modified in the order of a few unit lattice. Contribution of each scattering mechanisms on carrier mobility and densities of scattering centers in grown GaAsN films were evaluated. Compared with the film with 0 ML of GaAs, the density of N induced scattering center decreased with insertion of GaAs 3 ML between GaAsN 1 ML. It again increased the film with insertion of GaAs 5 ML. These results suggest that controlling N distribution intentionally not only degraded but also improved the electrical properties of GaAsN films.