Light extraction improvement of GaN-based light-emitting diodes using patterned undoped GaN bottom reflection gratings
2009
The Gallium Nitride (GaN) Light-Emitting-Diode (LED) bottom refection grating simulation and results are
presented. A microstructure GaN bottom grating, either conical holes or cylindrical holes, was calculated and
compared with the non-grating (flat) case. A time monitor was also placed just above the top of the LED to measure
both time and power output from the top of the LED. Many different scenarios were simulated by sweeping three
parameters that affected the structure of the micro-structure grating: unit cell period ( Α ) from 1 to 6 microns, unit
cell width ( w ) from 1 to 6 microns, and unit cell grating height ( d ) from 50 to 200nm. The simulation results show
that the cylindrical grating case has a 98% light extraction improvement, and the conical grating case has a 109%
light extraction improvement compared to the flat plate case.
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