Layered structure of Cis-based solar cell, and integrated structure

A without increasing the series resistance, to obtain a highly efficient solar cell with improved in pn heterojunction interface characteristic. A p-type CIS light absorbing layer, a buffer layer, in this order is laminated a CIS based thin-film solar cell of the n-type transparent conductive film, the buffer layer, two or more layers comprising a first buffer layer and second buffer layer a laminated structure, a first buffer layer in contact with the p-type CIS light absorbing layer, cadmium (Cd), or zinc (Zn), or made of a compound containing indium (in), in contact with the first buffer layer the second buffer layer made of zinc oxide based thin film, the thickness of the first buffer layer 20nm or less and the thickness of the second buffer layer was not less than 100 nm. .FIELD 1