5.5GHz LSNA MOSFET modeling for RF CMOS circuit design

The recent trend towards integrating an entire transceiver, with all its RF/analog/DSP functions, on a single CMOS chip is a consequence of strong market demands on RF chip size, cost, reliability, battery-life, etc. The design of a modern RF CMOS chips generates various technical challenges due to circuit complexity, signal complexity, and integration issues. Advanced LSNA characterization and modeling of deep submicron devices are critical to modern RF CMOS circuit design. This paper reviews some of the RF device level modeling technologies required for the design of RFICs. The LSNA modeling is performed using Agilent's characterization, parameter extraction and simulation tools flow.