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Ge成長速度の影響とSi(100)基板上のC Geドットの形成に及ぼす温度【Powered by NICT】
Ge成長速度の影響とSi(100)基板上のC Geドットの形成に及ぼす温度【Powered by NICT】
2017
Satoh Yuhki
Itoh Yuhki
Kawashima Tomoyuki
Washio Katsuyoshi
Keywords:
Inorganic chemistry
Medicinal chemistry
Materials science
Nanotechnology
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