Selective Area Epitaxy of Ballistic Semiconductor-Superconductor Nanowires

Semiconductor nanowires such as InAs and InSb are promising materials for studying Majorana zero-modes and demonstrating non-Abelian particle exchange relevant for topological quantum computing. While evidence for Majorana bound states in nanowires has been shown, the majority of these experiments are marked by significant disorder. In particular, the interfacial inhomogeneity between the superconductor and nanowire is strongly believed to be the main culprit for disorder and the resulting soft superconducting gap ubiquitous in tunneling studies of hybrid semiconductor-superconductor systems. We resolve this problem through the development of selective-area epitaxy of Al to InSb nanowires, a technique applicable to other nanowires and superconductors. Epitaxial InSb-Al devices generically demonstrate ballistic 1D superconductivity in the single mode regime and a hard superconducting gap, requisites for engineering 1D topological superconductivity. Our results pave the way for the development of networks of ballistic superconducting electronics for quantum device applications.