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Acemap > Paper > 01aB03 窒素励起モード切換MEE法を用いたSi(111)基板上のh-GaN膜の性質(半導体エピ(1),第36回結晶成長国内会議)

01aB03 窒素励起モード切換MEE法を用いたSi(111)基板上のh-GaN膜の性質(半導体エピ(1),第36回結晶成長国内会議)

2006 
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