High-performance amorphous indium–gallium–zinc oxide thin-film transistors with polymer gate dielectric

Abstract The fabrication of amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with a spin-coated polymer gate dielectric on a glass substrate is reported. The interface state density at the poly(4-vinylphenol)/a-IGZO interface is only around 4.05 × 10 11  cm − 2 . The TFTs' threshold voltage, subthreshold swing, on–off current ratio, and carrier mobility are 2.6 V, 1.3 V/decade, 1 × 10 5 , and 21.8 cm 2 /V s, respectively. These characteristics indicate that the TFTs are suitable for use as nonvolatile memory devices and in flexible electronic applications.