DEFLECTION OF HIGH ENERGY CHANNELED CHARGED PARTICLES BY ELASTICALLY BENT SILICON SINGLE CRYSTALS

An experiment has been carried out to observe the deflection of charged particles by planar channeling in bent single crystals of silicon for protons with energy up to 180 GeV. Anomolous loss of particles from the center point of a three point bending apparatus was observed at high incident particle energy. This effect has been exploited to fashion a “dechanneling spectrometer” to study dechanneling effects due to centripital displacement of channeled particle trajectories in a bent crystal. The bending losses generally conform to the predictions of calculations based on a classical model.