Method for manufacturing nanometer column LED (Light Emitting Diode)

The invention discloses a method for manufacturing a nanometer column LED (Light Emitting Diode). The method comprises the following steps of: stretching a u-GaN layer, an n-type GaN layer, a silicon dioxide masking layer and a polystyrene sphere on a sapphire substrate sequentially and externally; etching the polystyrene sphere by adopting a heating method and an ICP (Inductively Coupled Plasma) method; making the polystyrene sphere be little sunk at the surface of the silicon dioxide masking layer by adopting a heating processing, changing the point contact into surface contact; steaming a metal on the polystyrene sphere; removing the metal on the surface of the polystyrene sphere; adopting the heating processing and etching the silicon dioxide layer masking layer; etching and removing a metal masking film by acid liquid, and forming a silicon dioxide nanometer hole-shaped array structure; stretching an MQW (Multiple Quantum Well) layer, an EBL (Ethylene Bis Lauramide) layer and a p-GaN layer on the silicon dioxide nanometer hole-shaped array structure sequentially and externally, forming a substrate, and growing an ITO (Indium Tin Oxide) transparent electrode on the substrate; and cutting the ITO transparent electrode into small chips, placing the small chips in a BOE solution with the ultrasonic time being 80s, making the silicon dioxide nanometer hole-shaped array structure being coated by air after the silicon dioxide masking layer is etched, and finishing the preparation of a device. The method disclosed by the invention adopts a self-assembly technology, has simple craft and advanced technology, and is beneficial for large-scale production.