Method for fabricating nonvolatile semiconductor memory device

In the method for fabricating a nonvolatile semiconductor memory device where a nonohmic element layer and a variable resistance element layer are formed in lamination at a cross point of a first metal layer becoming a first wiring layer and a second metal layer becoming a second wiring layer, the first metal layer, the nonohmic element layer, and the variable resistance element layer are processed into a pattern of first line and space and then the side face of the nonohmic element layer exposed to the space portion is oxidized selectively thus enhancing the switching characteristics by reducing leak current and improving variation in resistance change of cell.