Increasing Output Power of LEDs (λ = 1.7-2.4 μm) by Changing Directions of Reflected Light Fluxes in GaSb/GaInAsSb/GaAlAsSb Heterostructures

It is demonstrated, using the example of light-emitting diodes (LEDs) based n-GaSb/n-GaIn-AsSb/p-GaAlAsSb heterostructures, that the formation of a curvilinear reflecting surface consisting of hemispherical etch pits on the rear side of an LED chip leads to an increase in the output radiation power by a factor of 1.9–2 in the entire wavelength interval studied (λ = 1.7–2.4 μm) as compared to the LED chip design with a continuous absorbing ohmic contact. This increase in the LED efficiency is related to a change in the directions of reflected light fluxes upon reflection from the hemispherical etch pits.