Characterization of graphene oxide film by implantation of low energy copper ions

Abstract Graphene oxide (GO) is an electrical insulator as most of the carbon atoms in this material are sp 3 -hybridized. Its physical, optical and chemical properties depend on the type and degree of reduction process. Presently, copper ion irradiation of GO foil has been performed at Ion Beam Center of the Helmholtz-Zentrum Dresden-Rossendorf to investigate the behavior of a set of GO foils under this irradiation at low energy and different fluences up to 5 × 10 16 ions/cm 2 . The compositional and optical properties of graphene oxide have been studied as a function of the fluences of implanted copper ions in the wavelength range 400–1000 nm. The results of ellipsometry microscopy, helium Rutherford backscattering spectroscopy, elastic recoil detection analysis, Raman spectroscopy and SEM-EDX measurements will be presented and discussed.