A modified computer model for the formation of porous silicon

Abstract A modified diffusion-limited model for the formation of porous silicon is proposed. The modified model retains the simplicity and effectiveness of the original model by R.L. Smith et al., yet provides a more accurate description of the porous Si formation. In particular, the modified model considers the probability of a reaction between the F − ions and the holes and is linked with the actual anodization conditions. The model explains why the anodic current density and HF concentration affect the formation of porous Si. The computer simulation results show a variation of porosity as functions of HF concentration and anodic current density, which has a trend closely matching that from the experimental results.