Photoinduced Refractive Index Changes and Photoluminescence in Semiconductor-Doped Glasses

Transient refractive index changes of Cd(S, Se)-glasses induced by 10 ns laser pulses at 532 nm are determined from time-resolved transmission measurements of a Fabry-Perot interferometer containing samples of the semiconductor glass. Comparison of the transient index measurements with time-resolved photoluminescence supports an electron-hole-plasma model and suggests that the relaxation mechanism is Auger recombination of the electrons and the holes.