High-Electric-Field Electron Transport at Silicon/Silicon-Dioxide Interface Inversion Layer

A time-of-flight experiment is performed to directly measure the properties of high-tangential-electric-field electron transport at the inversion layer in a metal oxide semiconductor device. We have observed that the saturation velocity is about 6.5×106 cm/s. The structure of the device used for the time-of-flight experiment is not identical to a conventional metal oxide semiconductor field-effect transistor. We found that the measured electron mobility is higher than that for the conventional metal oxide semiconductor field-effect transistor at the same effective normal electric field. Our results further elucidate the properties of electron mobility more than the reported results of Cooper and Nelson's experiment.