Efficient halide-based perovskite optoelectronic devices using conjugated polyelectrolytes

Halide-based perovskite materials have been spotlighted in light-emitting diodes and perovskite solar cells applications due to their excellent optical and electrical characteristics. In particular, excellent film quality of perovskite with defect passivation is required to obtain highly efficient and stable perovskite optoelectronic devices. However, lots of undesired trap sites by defect sites such as voids, pinholes, grain boundaries and under-coordinated ions in surface of film can be formed in solution-processed perovskite films, reducing the device performance and operational stability of perovskite devices. Here, we demonstrate efficient perovskite optoelectronic devices by incorporating poly(fluorene-phenylene)-based anionic conjugated polyelectrolytes (CPEs).