of the same transistor and method of forming

Transistor, which comprises a gate electrode formed on a gate dielectric layer formed on a substrate; a pair of source / drain regions which are formed in the substrate on opposite sides of a pair of mutually opposite lateral side walls of the gate electrode; wherein the gate electrode has a central, formed on the gate dielectric layer over the substrate region between the source / drain regions portion and a pair of L-shaped side wall portions which overlap with a portion of the source / drain regions wherein the central portion has a first workfunction and having the pair of L-shaped side wall sections having a second different work function.