High Performance Thermistor Based on Si 1−x Ge x /Si Multi Quantum Wells

This letter represents a prototype of an intrinsic thermistor based on silicon-germanium/silicon (Si 1−x Ge x /Si) multi quantum wells with varying Ge concentration in SiGe wells. Experimental results of the thermistor prototype are provided in terms of temperature coefficient of resistance (TCR) and noise constant (K 1/f ). The prototype with 50% Ge in SiGe wells exhibited an outstanding TCR of −5.5 %/K accompanied by a K 1/f of $5.8\times 10^{-13}$ for $25~\mu \text{m} \times 25~\mu \text{m}$ and $3.4\times 10^{-15}$ for $200~\mu \text{m} \times 200~\mu \text{m}$ pixel size, showing the concurrent achievement of a very high TCR and a low 1/f noise performance.