Influence of alloy composition on the diffusivity-mobility ratio in n-channel inversion layers on ternary semiconductors

An expression is derived for the diffusivity-mobility ratio of the carriers in n-channel inversion layers on semiconductors like the ternary compounds which have strongly non-parabolic energy bands. The dependence of the ratio on alloy composition is also studied under the weak-field limit taking n-channel Hg1−xCdx.Te as an example.