EM and lumped-element model of BiCMOS embedded capacitive RF-MEMS switch

This paper presents the modeling of an integrated capacitive RF-MEMS switch. Both electromagnetic (EM) and RLC lumped-element modeling are investigated. These models are applied to an 80 GHz MEMS switch and they agree well with the measurement results up to 115 GHz. The 80 GHz RF-MEMS switch has been optimized and fabricated in a 0. 25 μm SiGe BiCMOS process. It exhibits an insertion loss of 0.5 dB, an isolation of 25 dB and a return loss of 30 dB. The developed RLC model is very convenient to integrate into process design kit (PDK) for circuit simulations.