Tri-gate device having high mobility and its method of manufacture

A semiconductor device having high mobility, which comprises: is located a first substrate (1002;; 1504) having a first reference orientation feature in a crystal plane on the first substrate (1504 1002); and a second, over the first substrate (1002; 1504) formed substrate (1006; 1508), wherein the second substrate (1006; 1508) having a second reference orientation feature that is located in a crystal plane on the second substrate, wherein the first reference orientation feature is aligned with the second reference orientation feature, and a in the second substrate (1006; 1508) formed nonplanar device (300), wherein the non-planar member (300) comprises: one on the first substrate (1002; 1504) and in the second substrate (1006; 1508) formed semiconductor body (908; 1520) having a height and width and having a top surface and laterally opposite side walls, wherein the top surface and the laterally opposite sidewalls of the semiconductor body (908; 1520) each having a crystal plane, wherein the height of 0.5 times equivalent to the up to 2 times the width, a on the top surface and the laterally opposite sidewalls of the semiconductor body (908; 1520) formed gate dielectric (922; 1526); and a gate electrode (924; 1530), which is adjacent to the formed on the top of surface and on the laterally opposite sidewalls of the semiconductor body gate dielectric (922; 1526) is formed.