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Compatibility of POCl 3 gate process with the fabrication of vertical 4H-SiC MOSFETs
Compatibility of POCl 3 gate process with the fabrication of vertical 4H-SiC MOSFETs
2019
Tomokatsu Watanabe
Keywords:
Optoelectronics
Fabrication
Materials science
Compatibility (mechanics)
Correction
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