33.1: Channel-Etched C-Axis Aligned Crystalline Oxide Semiconductor FET Using Cu Wiring

A channel-etched IGZO field-effect transistor (FET) using Cu wiring was fabricated. Because little Cu is diffused into a c-axis aligned crystalline oxide semiconductor (CAAC-OS), which is c-axis aligned crystalline IGZO, the use of the CAAC-OS provides favorable characteristics for a channel-etched FET.