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Theoretical Studies on Oxidation Rate of 4H-SiC -Origin of Difference in Oxidation Rate between Si-surface and C-surface-
Theoretical Studies on Oxidation Rate of 4H-SiC -Origin of Difference in Oxidation Rate between Si-surface and C-surface-
2013
Shotaro Maruyama
Keywords:
Materials science
oxidation rate
Analytical chemistry
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