An Improved SPICE Model for a 1.2-kV, 36-A Discrete SiC-MOSFET With Higher Accuracy for a Wide Range of Drain Currents

This paper describes higher accuracy of an improved SPICE model for a wide range of drain currents for a 1.2-kV, 36-A discrete SiC-MOSFET. The improved SPICE model is developed on the basis of our former Simplorer model by introducing new SPICE codes. Its accuracy and computational stability are validated by comparing the simulated switching waveforms with measurement and that from the manufacture's model up to the drain current of 30 A.