Copper Chemical Vapor Deposition using a Novel Cu(II) Precursor for Contact Via Filling Process
2007
Chemical vapor deposition (CVD) of copper using both a novel Cu(II) β-diketonate source and hydrogen reduction process was studied to fill contact vias with the smallest diameter in the 32nm and more advanced generation chip. Pure Cu films were grown under the condition with the product of hydrogen partial pressure and H2/Cu source molar ratio being over 1,000,000. We succeeded in filling the 40-nm-diameter contact vias by optimizing the growth condition of the Cu-CVD in both substrate temperatures and reaction pressures.
Keywords:
- Thin film
- Hybrid physical-chemical vapor deposition
- Ion plating
- Combustion chemical vapor deposition
- Plasma processing
- Electron beam physical vapor deposition
- Materials science
- Inorganic chemistry
- Pulsed laser deposition
- Deposition (phase transition)
- Plasma-enhanced chemical vapor deposition
- Chemical vapor deposition
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