Reactive ion etching of GaAs using BCl3

The reactive ion etching of GaAs has been investigated in BCl3 plasma discharges. Etching rates have been characterized as functions of pressure (10–25 mTorr), power density (∼0.05–0.5W/cm2), and Cl2/BCl3 gas compositions. Rates of ∼12–20 nm/min have been obtained, and are significantly lower than for other chlorinated plasmas. Etching profiles exhibit a high degree of anisotropy and smooth surface morphologies.