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New Write/Erase Operation Technology for Flash EEPROM Cells to Improve the Read Disturb Characteristics
New Write/Erase Operation Technology for Flash EEPROM Cells to Improve the Read Disturb Characteristics
1997
Tetsuo Endoh
Hirohisa Iizuka
Riichirou Shirota
Fujio Masuoka
Keywords:
Engineering
EEPROM
Embedded system
Flash memory
Computer hardware
Correction
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