THE USE OF LINEAR ELECTRON ACCELERATORS IN THE STUDY OF SEMICONDUCTOR AND OPTOELECTRONIC DEVICE BEHAVIOUR DUE TO IRRADIATION

As a result of the particle accelerator technique development, the basic researches as well as the applicative ones, related to the utilisation of radiation obtained with accelerators and radioisotopic sources in order to modify to the wish the properties of the matter, have received a greater attention. The technological processes based on the ionising effect of the radiation, or radiotechnology as lately called, became competitive with the classical ones in many industrial applications. So, in the near future, it is possible that some radiotechnological methods, not having yet the equivalent among the classical ones, may substitute the latter as soon as they become more profitable or reveal more performant parameters in point of industrial reliability. Of course, some of them will continue to exist in parallel. So, as an example, we may consider some permanent changes after electron or fast neutron irradiation, such as carriers storage time in a pn junction or transistor current gain that could be used as radiotechnological stages in semiconductor electron device production.