Nonlinear phenomena in hydrogen implantation into (100) silicon

Abstract Though the implantation of hydrogen into (100) silicon at 15.5 keV and 75 keV is substantially linear with fluence in the range 10 14 −2×10 16 cm −2 small nonlinear phenomena are observed considering the chemical and damage profiles, as determined by secondary ion mass spectrometry and double crystal X-ray diffraction, respectively. A general theory to describe quantitatively nonlinear effects in hydrogen implantation into silicon is developed and compared with experimental data; the parameters of this theory can be evaluated with ab initio MARLOWE calculations.