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SiC Double-trench MOSFETs with Source-recessed Structure for Enhanced Ruggedness
SiC Double-trench MOSFETs with Source-recessed Structure for Enhanced Ruggedness
2021
Lihao Wang
Yunpeng Jia
Zhou Xintian
Yuanfu Zhao
Liang Wang
Dongqing Hu
Wu Yu
Zhonghan Deng
Keywords:
Optoelectronics
Trench
Materials science
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