Differential cross-section measurements for proton elastic scattering on natSi in the energy range Ep,lab = 3–5 MeV, suitable for EBS

Abstract The differential cross section values of the natSi(p,p0) elastic scattering were determined in the energy range of Ep,lab = 3000–5000 keV at 6 backscattering detection angles (120°, 130°, 140°, 1 50°, 160° and 170°). The target was a self-supported thin Si3N4 foil. In addition, a thick crystalline silicon wafer was irradiated on its unpolished side with protons at energies Ep,lab = 3200, 3400, 3600, 3850, 4100, 4300, 4500, 4740, 5000 keV, in order to validate the results of the first experiment. On top of both targets a thin layer of 197Au was evaporated for normalization purposes. Both measurements were performed in parallel, using the 5.5 MV TN11 HV Tandem Accelerator and the high precision goniometer of N.C.S.R. ‘Demokritos’, Athens, Greece. The experimental and data analysis processes are presented in detail, as well as, comparisons between the obtained differential cross sections and already existing datasets in literature, along with the benchmarking results.