20 GHz low noise beam lead GaAs FET
1982
A beam-lead recessed gate GaAs MESFET structure with 0.8 μm gate length has been designed and fabricated. Gain in excess of 8.2 dB and noise figures as low as 3.3 dB at 20 GHz have been measured thus demonstrating the potential of beam lead FETs for high frequency operation.
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