Radiation-image-capturing device

A radiation-image-capturing device (7) has a sensor panel (25) made of a plurality of CMOS sensors (33). The sensor panel (25) has a signal-outputting circuit formed on a monocrystal semiconductor substrate. The top surface of a top plate (13) irradiated by x-rays is provided with a radiation-absorbing unit (20) for absorbing some of the x-rays (low-energy components) responsible for characteristics degradation of the signal-outputting circuit. The radiation-absorbing unit (20) is made of a bag (47) and a radiation-absorbing fluid (48) accommodated within the bag (47). The radiation-absorbing unit (20) is deformed under loading from a subject (H).