The semiconductor memory cell and method for manufacturing a semiconductor memory device, and

The semiconductor memory cell according to the present invention includes a memory element formed of a first field-effect transistor (21) and by the element selection switch of the second field effect transistor (22), a gate of the first field-effect transistor with a ferroelectric film an insulating film (13), the second field-effect transistors constituting the gate insulating film (16) with a paraelectric film, the ferroelectric film interposed therebetween paraelectric film semiconductor film (14) made of a compound semiconductor lamination. Forming a first gate electrode of the first field effect (12) transistor ferroelectric film side thereof, the paraelectric film and the first side of the gate electrode (12) formed to face the second gate electrode of the second field-effect transistor (17), a semiconductor film (14) constituting a channel layer common first and second field-effect transistor.