Near‐infrared cathodoluminescence imaging of defect distributions in In0.2Ga0.8As/GaAs multiple quantum wells grown on prepatterned GaAs

The defect distribution in a highly strained In0.2Ga0.8As/GaAs multiple‐quantum‐well (MQW) structure grown on a patterned GaAs substrate is examined with cathodoluminescence imaging and spectroscopy in the near infrared. By spatially correlating the luminescence arising from the MQW exciton recombination (λ≊950 nm) with the longer wavelength (1000≲λ≲1200 nm) luminescence arising from the defect‐induced recombination, we demonstrate that it is possible to determine the regions of highest film quality in both the mesa and valley regions. The present approach enables a judicious determination of the optimal regions to be used for active pixels in InGaAs/GaAs spatial light modulators.