Reconfigurable Metamaterials with InGaZnO Schottky Barrier Diodes at Terahertz Frequencies

we propose electrically reconfigurable metamaterials (MTMs) at terahertz (THz) frequencies using InGaZnO (IGZO) Schottky barrier diodes, achieving a continuous amplitude modulation of 13%. The IGZO film was deposited at the capacitive gap of electric-field-coupled inductor-capacitor (ELC) MTMs. By sweeping the depletion region with DC bias, the averaged conductivity of IGZO film is changed, and thus the reconfiguration is accomplished. Upon varying the film conductivity, the simulated transmission can be modulated from 14.5 to -9.9 dB at 0.39 THz, corresponding to a modulation depth of 13%. Such active metamaterials address many attractive advantages, including not only low cost and simple fabrication process but also reasonable modulation depth and large area for several inch-scale.