Multi-quantum well modulator arrays fabricated by gas source MBE

Abstract Gas source MBE is a promising technique for the growth of InGaAs-InP multi-quantum well layers, suitable for use as quantum confined Stark effect modulators. The application of gas source MBE to the growth of single and multi-quantum wells is described, and detailed analysis of interface perfection has been obtained by multiple crystal X-ray diffraction techniques and low temperature photoluminescence. Fabrication of a (4 × 4) modulator structure is described.